Datasheet4U Logo Datasheet4U.com

F1001C Datasheet - Polyfet RF Devices

RF POWER VDMOS TRANSISTOR

F1001C Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance F1001C PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RA

F1001C Datasheet (33.80 KB)

Preview of F1001C PDF

Datasheet Details

Part number:

F1001C

Manufacturer:

Polyfet RF Devices

File Size:

33.80 KB

Description:

Rf power vdmos transistor.

📁 Related Datasheet

F1001 RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

F100122 9-BIT BUFFER (National Semiconductor)

F100124 Hex TTL-to-ECL Translator (National Semiconductor)

F100125 Hex ECL-to-TTL Translator (National Semiconductor)

F100136 4-Stage Counter / Shift Register (National Semiconductor)

F100164 16 Input Multiplexer (Fairchild Semiconductor)

F100164 16 Input Multiplexer (National Semiconductor)

F100180 HIGH-SPEED 6-BIT ADDER (National Semiconductor)

F100183 2 X 8-BIT RECODE MULTIPLIER (National Semiconductor)

F1000LC120 Extra Fast Recovery Diode (IXYS)

TAGS

F1001C POWER VDMOS TRANSISTOR Polyfet RF Devices

Image Gallery

F1001C Datasheet Preview Page 2

F1001C Distributor