Datasheet Details
- Part number
- F1001C
- Manufacturer
- Polyfet RF Devices
- File Size
- 33.80 KB
- Datasheet
- F1001C_PolyfetRFDevices.pdf
- Description
- RF POWER VDMOS TRANSISTOR
F1001C Description
polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
F1001C Features
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
F1001C
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RA
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