FCB11N60 Datasheet - Fairchild Semiconductor

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FCB11N60 N-Channel MOSFET

FCB11N60 * N-Channel SuperFET® MOSFET FCB11N60 N-Channel SuperFET® MOSFET 600 V, 11 A, 380 mΩ .
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance tech.

FCB11N60_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FCB11N60

Manufacturer:

Fairchild Semiconductor

File Size:

399.11 KB

Description:

N-Channel MOSFET

Features

* 650V @ TJ = 150°C
* Typ. RDS(on) = 320 mΩ
* Ultra Low Gate Charge (Typ. Qg = 40 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 95 pF)
* 100% Avalanche Tested

Applications

* such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Drain Current Drain Current -

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FCB11N60 N-Channel MOSFET Fairchild Semiconductor

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