* 700 V @ TJ = 150°C
* Typ. RDS(on) = 168 mΩ
* Ultra Low Gate Charge (Typ. Qg = 60 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)
* 100% Avalanche Tested
* RoHS Compliant Applications
* LCD / LED / PDP TV
* Telecom /
FCH190N65F Datasheet (1.28 MB)
FCH190N65F
Fairchild Semiconductor
1.28 MB
Mosfet.
FCH190N65F
* N-Channel SuperFET® II FRFET® MOSFET
FCH190N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 20.6 A, 190 mΩ
December 2014
Featu.
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Features
• 700 V @ TJ = 150°.
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