FCI25N60N Datasheet (Fairchild Semiconductor)

FCI25N60N, N-Channel SupreMOS MOSFET

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

This advanced technology and precise process control provides lowest Rsp on-resistance, su

FCI25N60N Features

* RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A

* Ultra Low Gate Charge (Typ. Qg = 57 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)

* 100% Avalanche Tested

* RoHS Compliant Application

* Solar Inverter

* AC-DC Power Supp