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FCI25N60N

N-Channel SupreMOS MOSFET

FCI25N60N Features

* RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A

* Ultra Low Gate Charge (Typ. Qg = 57 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)

* 100% Avalanche Tested

* RoHS Compliant Application

* Solar Inverter

* AC-DC Power Supp

FCI25N60N General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, su.

FCI25N60N Datasheet (575.22 KB)

Preview of FCI25N60N PDF

Datasheet Details

Part number:

FCI25N60N

Manufacturer:

Fairchild Semiconductor

File Size:

575.22 KB

Description:

N-channel supremos mosfet.

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FCI25N60N N-Channel SupreMOS MOSFET Fairchild Semiconductor

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