FCI25N60N Datasheet, Mosfet, Fairchild Semiconductor

FCI25N60N Features

• Mosfet
• RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)

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Part number:

FCI25N60N

Manufacturer:

Fairchild Semiconductor

File Size:

575.22kb

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📄 Datasheet

Description:

N-channel supremos mosfet. The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep tre

FCI25N60N Application

• Applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D GDS I2-PAK G S MOSFET Maximum Ra

TAGS

FCI25N60N

Fairchild Semiconductor

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