FCI25N60N_F102 Datasheet, Mosfet, Fairchild Semiconductor

FCI25N60N_F102 Features

• Mosfet
• RDS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 262 pF)

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Part number:

FCI25N60N_F102

Manufacturer:

Fairchild Semiconductor

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355.27kb

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📄 Datasheet

Description:

N-channel supremos mosfet. The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep tre

FCI25N60N_F102 Application

• Applications
• Solar Inverter
• AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of

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FCI25N60N_F102

Fairchild Semiconductor

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