FCI25N60N_F102 Datasheet (Fairchild Semiconductor)

FCI25N60N_F102, N-Channel SupreMOS MOSFET

The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs.

This advanced technology and precise process control provide lowest Rsp on-resistance, superio

FCI25N60N_F102 Features

* RDS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A

* Ultra Low Gate Charge (Typ. Qg = 57 nC)

* Low Effective Output Capacitance (Typ. Coss.eff = 262 pF)

* 100% Avalanche Tested

* RoHS Compliant Applications

* Solar Inverter

* AC-DC Power Supply