FCI25N60N_F102 Datasheet - Fairchild Semiconductor

FCI25N60N_F102 N-Channel SupreMOS MOSFET

The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superio.

FCI25N60N_F102 Features

* RDS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A

* Ultra Low Gate Charge (Typ. Qg = 57 nC)

* Low Effective Output Capacitance (Typ. Coss.eff = 262 pF)

* 100% Avalanche Tested

* RoHS Compliant Applications

* Solar Inverter

* AC-DC Power Supply

FCI25N60N_F102 Datasheet (355.27 KB)

FCI25N60N_F102 Datasheet Preview — Preview of FCI25N60N_F102 PDF

Datasheet Details

Part number:

FCI25N60N_F102

Manufacturer:

Fairchild Semiconductor

File Size:

355.27 KB

Description:

N-channel supremos mosfet.

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FCI25N60N_F102 N-Channel SupreMOS MOSFET Fairchild Semiconductor

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