FCP36N60N Datasheet, Mosfet, Fairchild Semiconductor

✔ FCP36N60N Features

RDS(on) = 81 mΩ (Typ.) @ VGS = 10 V, ID = 18 A
Ultra Low Gate Charge (Typ. Qg = 86 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF)
100% Avalanche

✔ FCP36N60N Application

such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D GDS TO-2

PDF File Details

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Part number:

FCP36N60N

Manufacturer:

Fairchild Semiconductor

File Size:

822.58 KB

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📄 Datasheet

Description:

N-channel mosfet. The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep tre

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FCP36N60N N-Channel MOSFET Fairchild Semiconductor