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FCP099N60E N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
FCP099N60E
Manufacturer
INCHANGE
File Size
253.05 KB
Datasheet
FCP099N60E-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With TO-220 packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ Tc=100℃ 37 24 A IDM Drain Current-Single Pulsed 111 A PD Total Dis

FCP099N60E Distributors

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📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE FCP099N60E-like datasheet