FCPF11N60 Key Features
- 650V @Tj = 150°C
- Typ. Rds(on)=0.32Ω
- Ultra low gate charge (typ. Qg=40nC)
- Low effective output capacitance (typ. Coss.eff=95pF)
- 100% avalanche tested
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FCPF11N60NT | N-Channel MOSFET |