Inchange Semiconductor FCPF11N60NT
N-Channel MOSFET
| Part No. | FCPF11N60NT |
|---|---|
| Datasheet | FCPF11N60NT Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●With TO-220F packaging●High speed switching
●Low gate input resistance
●Standard level gate drive
●Easy to use
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Power supply●Switching applications
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 10.8 Tc=100℃ 6.8 A IDM Drain Current-Single Pulsed 32.4 A PD Total Dissipation 32.1 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 3.9 ℃/W FCPF11N60NT isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor FCPF11N60NT
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA VGS(th) Gate Threshol...