Fairchild Semiconductor FCPF11N60NT
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.| Part No. | FCPF11N60NT |
|---|---|
| Datasheet | FCPF11N60NT Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A● Ultra Low Gate Charge (Typ. Qg = 27.4 nC)
● Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF)
● 100% Avalanche Tested
● RoHS Compliant Application
● LCD/LED/PDP TV
● Lighting
● Solar Inverter
● AC-DC Power Supply
DESCRIPTION
SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D GDS TO-220 GDS TO-220F GABSOLUTE MAXIMUM RATINGS
TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature.
