Datasheet Summary
FCP11N60N / FCPF11N60NT
- N-Channel SupreMOS® MOSFET
FCP11N60N / FCPF11N60NT
N-Channel SupreMOS® MOSFET
600 V, 10.8 A, 299 mΩ
November 2013
Features
- RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A
- Ultra Low Gate Charge (Typ. Qg = 27.4 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF)
- 100% Avalanche Tested
- RoHS pliant
Application
- LCD/LED/PDP TV
- Lighting
- Solar Inverter
- AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process...
