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FCPF11N60NT - N-Channel MOSFET

Download the FCPF11N60NT datasheet PDF. This datasheet also covers the FCP11N60N variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Key Features

  • RDS(on) = 255 mΩ (Typ. ) @ VGS = 10 V, ID = 5.4 A.
  • Ultra Low Gate Charge (Typ. Qg = 27.4 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 130 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCP11N60N-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET FCP11N60N / FCPF11N60NT N-Channel SupreMOS® MOSFET 600 V, 10.8 A, 299 mΩ November 2013 Features • RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A • Ultra Low Gate Charge (Typ. Qg = 27.4 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.