FCPF11N65 Datasheet | Fairchild Semiconductor

- N-Channel SuperFET® MOSFET February 2015 N-Channel SuperFET® MOSFET 650 V, 11 A, 380 mΩ Features - Typ. RDS(on) = 320 mΩ - Ultra Low Gate Charge (Typ. Qg = 40 nC) - Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) - 100% Avalanche Tested Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for...