* RDS(on) = 2.75 Ω (Typ.)
* Ultra Low Gate Charge (Typ. Qg = 7.4 nC)
* Low Eoss (Typ. 0.9 uJ @ 400V)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 41 pF)
* 100% Avalanche Tested
* RoHS Compliant
* ESD Improved Capability Applications D
FCU3400N80Z Datasheet (719.89 KB)
FCU3400N80Z
Fairchild Semiconductor
719.89 KB
Mosfet.
FCD3400N80Z / FCU3400N80Z
* N-Channel SuperFET® II MOSFET
March 2015
FCD3400N80Z / FCU3400N80Z
N-Channel SuperFET® II MOSFET
800 V, 2 A, 3..
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