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FCU360N65S3R0

N-Channel Power MOSFET

FCU360N65S3R0 Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 310 mW

* Ultra Low Gate Charge (Typ. Qg = 18 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCU360N65S3R0 General Description

SUPERFET III MOSFET is ON Semiconductor’s brand

*new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superi.

FCU360N65S3R0 Datasheet (358.98 KB)

Preview of FCU360N65S3R0 PDF

Datasheet Details

Part number:

FCU360N65S3R0

Manufacturer:

ON Semiconductor ↗

File Size:

358.98 KB

Description:

N-channel power mosfet.

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FCU360N65S3R0 N-Channel Power MOSFET ON Semiconductor

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