FCU900N60Z Datasheet, Mosfet, ON Semiconductor

✔ FCU900N60Z Features

675 V @ TJ = 150°C
Typ. RDS(on) = 820 mW
Ultra Low Gate Charge (Typ. Qg = 13 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 48.6 pF)
100% Avalanche Tes

✔ FCU900N60Z Application

such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features
675

PDF File Details

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Part number:

FCU900N60Z

Manufacturer:

ON Semiconductor ↗

File Size:

300.89 KB

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📄 Datasheet

Description:

N-channel mosfet. SuperFET® II MOSFET is ON Semiconductor’s brand*new high voltage super*junction (SJ) MOSFET family that is utilizing charge balance t

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MOSFET N-CH 600V 4.5A IPAK

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FCU900N60Z

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FCU900N60Z N-Channel MOSFET ON Semiconductor