FCU900N60Z Datasheet - ON Semiconductor

N-Channel MOSFET

FCU900N60Z Features

* 675 V @ TJ = 150°C

* Typ. RDS(on) = 820 mW

* Ultra Low Gate Charge (Typ. Qg = 13 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 48.6 pF)

* 100% Avalanche Tested

* ESD Improved Capacity

* RoHS Compliant Applications

* LCD/LE

FCU900N60Z General Description

SuperFET® II MOSFET is ON Semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide.

FCU900N60Z Datasheet (300.89 KB)