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FDA2712

N-Channel UltraFET Trench MOSFET

FDA2712 Features

* RDS(on) = 29.2mΩ @VGS = 10 V, ID = 40A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant UltraFET tm Description This N-Channel MOSF

FDA2712 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications

* PDP application D G G DS TO-3PN S MOSFET Maximum Ratings S.

FDA2712 Datasheet (375.62 KB)

Preview of FDA2712 PDF

Datasheet Details

Part number:

FDA2712

Manufacturer:

Fairchild Semiconductor

File Size:

375.62 KB

Description:

N-channel ultrafet trench mosfet.

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TAGS

FDA2712 N-Channel UltraFET Trench MOSFET Fairchild Semiconductor

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