Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
- 48A, 30 V. RDS(ON) = 0.0125 Ω @ VGS = 10 V, RDS(ON) = 0.017 Ω @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175°C maximum junction temperature rating. _________________________________________________________________________________
D
G
S Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Pa.
FDB6035AL_FairchildSemiconductor.pdf
