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FDB6035AL - N-Channel MOSFET

Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

  • 48A, 30 V. RDS(ON) = 0.0125 Ω @ VGS = 10 V, RDS(ON) = 0.017 Ω @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175°C maximum junction temperature rating. _________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Pa.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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July 1998 FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 48A, 30 V. RDS(ON) = 0.0125 Ω @ VGS = 10 V, RDS(ON) = 0.017 Ω @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature.
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