Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
- 48 A, 30 V
RDS(ON) = 13 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V.
- Critical DC electrical parameters specified at elevated temperature.
- High performance trench technology for extremely low RDS(ON).
- 175°C maximum junction temperature rating
D
D
G D S
TO-220
FDP Series
G S
TO-263AB
FDB Series
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current.
FDB6030L Datasheet
