Datasheet4U Logo Datasheet4U.com

FDB6030BL - N-Channel MOSFET

General Description

40 A, 30 V.

RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V.

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Critical DC el

Key Features

  • General.

📥 Download Datasheet

Datasheet Details

Part number FDB6030BL
Manufacturer onsemi
File Size 255.41 KB
Description N-Channel MOSFET
Datasheet download datasheet FDB6030BL Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDB6030BL N-Channel MOSFET Fairchild Semiconductor
FDB6030 N-Channel MOSFET Fairchild Semiconductor
FDB6030L N-Channel MOSFET Fairchild Semiconductor
FDB6035AL N-Channel MOSFET Fairchild Semiconductor
FDB6035L N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDB035AN06A0 N-Channel MOSFET
FDB035N10A N-Channel MOSFET
FDB045AN08A0 N-Channel MOSFET
FDB045AN08A0-F085 N-Channel MOSFET
FDB050AN06A0 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP6030BL/FDB6030BL FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET Features General Description • 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V. This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.