FDB8160_F085 Datasheet | Fairchild Semiconductor

Features - Typ r DS(on) = 1.5mΩ at VGS = 10V, ID = 80A - Typ Qg(10) = 187n C at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 - Ro HS pliant Applications - 12V Automotive Load Control - Starter/Alternator Systems - Electronic Power Steering Systems - DC/DC converter TO-263AB FDB SERIES ©2010 Fairchild Semiconductor Corporation FDB8160_F085 Rev. C .fairchildsemi. FDB8160_F085 N-Channel Power Trench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 160o C, VGS = 10V) Pulsed EAS Single Pulse Avalanche Energy Power Dissipation Derate above 25o C TJ, TSTG Operating and Storage Temperature Thermal Characteristics (Note 1) RθJC RθJA Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area Ratings 30 ±20 80 See Figure 4 1290 254 1.7 -55 to +175 Units V...