FDB8874 N-Channel MOSFET

Fairchild Semiconductor

Description

FDB8874 November 2004 FDB8874 N-Channel PowerTrench® MOSFET 30V, 121A, 4.7mΩ General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDB8874
Manufacturer: Fairchild Semiconductor
File Size: 267.38 KB
Datasheet: FDB8874_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* rDS(ON) = 4.7mΩ , VGS = 10V, ID = 40A
* rDS(ON) = 6.0mΩ , VGS = 4.5V, ID = 40A
* High performance trench technology for extremely low rDS(ON)

Applications

* DC/DC converters
* High power and current handling capability D GATE G SOURCE DRAIN (FLANGE) TO-263AB FDB SERIES S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 2

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FDB8874 N-Channel MOSFET Fairchild Semiconductor

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