FDB8874
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed.
Features
- r DS(ON) = 4.7mΩ , VGS = 10V, ID = 40A
- r DS(ON) = 6.0mΩ , VGS = 4.5V, ID = 40A
- High performance trench technology for extremely low r DS(ON)
- Low gate charge
Applications
- DC/DC converters
- High power and current handling capability
GATE
SOURCE DRAIN (FLANGE)
TO-263AB
FDB SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) (Note 1) ID Continuous (TC = 25o C, VGS = 4.5V) (Note 1) Continuous (Tamb = 25o C, VGS = 10V, with Rθ JA = 43o C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25o C Operating and Storage Temperature...
