FDD16AN08A0 Key Features
- RDS(on) = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A
- QG(tot) = 31 nC ( Typ.) @ VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
| Part Number | Description |
|---|---|
| FDD1600N10ALZ | N-Channel MOSFET |
| FDD1600N10ALZD | N-Channel MOSFET |
| FDD107AN06LA0 | N-Channel PowerTrench MOSFET |
| FDD10AN06A0 | N-Channel MOSFET |
| FDD10AN06A0_F085 | MOSFET |