FDD16AN08A0 Datasheet | Fairchild Semiconductor

Features - RDS(on) = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A - QG(tot) = 31 n C ( Typ.) @ VGS = 10 V - Low Miller Charge - Low Qrr Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) Applications - Synchronous Rectification - Battery Protection Circuit - Motor drives and Uninterruptible Power Supplies Formerly developmental type 82660 D-PAK MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 79o C, VGS = 10V) Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 52o C/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. Thermal Resistance, Junction to Ambient, 1in2 copper pad area, Max. FDD16AN08A0 75 ±20 50 9 Figure 4 95 135 0.9 -55 to 175 1.11 100 52 Unit V V A A A m J W W/o C o C o C/W o C/W o C/W ©2002 Fairchild Semiconductor Corporation FDD16AN08A0 Rev. C2 .fairchildsemi. - N-Channel Power Trench® MOSFET Package Marking and Ordering...