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FDD3680 100V N-Channel PowerTrench MOSFET

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Description

FDD3680 February 2001 FDD3680 100V N-Channel PowerTrench® MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number
FDD3680
Manufacturer
Fairchild Semiconductor
File Size
75.19 KB
Datasheet
FDD3680_FairchildSemiconductor.pdf
Description
100V N-Channel PowerTrench MOSFET

Features

* 25 A, 100 V. RDS(ON) = 46 mΩ @ V GS = 10 V RDS(ON) = 51 mΩ @ V GS = 6 V
* Low gate charge (38 nC typical)
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability. D D G S TO-252 S

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