FDD5680
FDD5680 is N-Channel/ PowerTrench MOSFET manufactured by Fairchild Semiconductor.
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- -
- 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V. Low gate charge (33n C typical). Fast switching speed. High performance trench technology for extremely low RDS(on).
Applications
- -
DC/DC converter Motor drives
- D
TO-252
Absolute Maximum Ratings
Symbol
VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage
TA=25 C unless otherwise noted o
Parameter
Ratings
60 ±20
(Note 1) (Note 1a)
Units
Maximun Drain Current
- Continuous Maximum Drain Current
- Pulsed
38 8.5 100 60 2.8 1.3 -55 to +150
Maximum Power Dissipation @ TC = 25o C TA = 25o C TA = 25o C
(Note 1) (Note 1a) (Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient
(Note 1) (Note 1b)
2.1 96
°C/W °C/W
Package Marking and Ordering Information
Device Marking...
