Datasheet Details
| Part number | FDD5680 |
|---|---|
| Manufacturer | onsemi |
| File Size | 431.81 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 FDD5680 Datasheet
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General Description
This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
DC/DC converter Motor drivesKey Features
- 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V.
- Low gate charge (33nC typical).
- Fast switching speed.
- High performance trench technology for extremely low RDS(on). D D G G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Maximun Drain Current - Continuous (Note 1) (Note 1a) Maximum Drain Current - Pulsed Maximum Power Dis.