Datasheet Summary
March 2015
N-Channel, PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Applications
- DC/DC converter
- Motor drives
Features
- 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V
RDS(on) = 0.025 Ω @ VGS = 6 V.
- Low gate charge (33nC typical).
- Fast switching speed.
- High performance trench technology for extremely low RDS(on).
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