FDD86110 - N-Channel MOSFET
* Shielded Gate MOSFET Technology * Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A * Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A * 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Sh
