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FDD86110

N-Channel MOSFET

FDD86110 Features

* General Description

* Shielded Gate MOSFET Technology

* Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A

* Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A

* 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process

FDD86110 General Description



* Shielded Gate MOSFET Technology

* Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A

* Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A

* 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Sh.

FDD86110 Datasheet (396.74 KB)

Preview of FDD86110 PDF

Datasheet Details

Part number:

FDD86110

Manufacturer:

Fairchild Semiconductor

File Size:

396.74 KB

Description:

N-channel mosfet.

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FDD86110 N-Channel MOSFET Fairchild Semiconductor

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