FDD86540 Description
Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A 100% UIL tested RoHS pliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and...
FDD86540 Key Features
- Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A
- Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A
- 100% UIL tested
- RoHS pliant