Datasheet Details
| Part number | FDD86540 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 358.29 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDD86540-FairchildSemiconductor.pdf |
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Overview: FDD86540 N-Channel PowerTrench® MOSFET FDD86540 N-Channel PowerTrench® MOSFET 60 V, 136 A, 4.
| Part number | FDD86540 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 358.29 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDD86540-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A 100% UIL tested RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch D D G S DT O-P-2A5K2 (T O -25 2) G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 60 ±20 136 86 21.5 240 228 127 3.1 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 0.98 (Note 1a) 40 °C/W Device Marking FDD86540 Device FDD86540 Package D-PAK(TO-252) Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units ©2012 Fairchild Semiconductor Corporation 1 FDD86540 Rev.
1.2 www.fairchildsemi.com FDD86540 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 60 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage
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