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FDD86540 - N-Channel MOSFET

General Description

Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A 100% UIL tested RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC co

Key Features

  • General.

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FDD86540 N-Channel PowerTrench® MOSFET FDD86540 N-Channel PowerTrench® MOSFET 60 V, 136 A, 4.1 mΩ March 2015 Features General Description „ Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A „ Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.