Datasheet Summary
FDD86540 N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET
60 V, 136 A, 4.1 mΩ
March 2015
Features
General Description
- Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A
- Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A
- 100% UIL tested
- RoHS pliant
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications
- Primary Switch in isolated DC-DC
- Synchronous Rectifier
- Load...