* rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A
* Qg(tot) = 92nC (Typ.), VGS = 10V
* Low Miller Charge
* Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101 Formerly developmental type 82684 Applications
FDH047AN08A0 Datasheet (606.44 KB)
FDH047AN08A0
Fairchild Semiconductor
606.44 KB
N-channel mosfet.
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
June 2004
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ
Featur.
📁 Related Datasheet
FDH047AN08A0 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH)
75 V, 80 A, 4.7 mW
FDH047AN08A0, FDP047AN08A0
Features
RDS(ON) = 4.0 mW (Typ.), VGS = 10 V, ID = 80 A Qg(TOT) = 9.
FDH038AN08A1 - N-Channel MOSFET
(Fairchild Semiconductor)
FDH038AN08A1
February 2003
FDH038AN08A1
N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ
Features
• r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(.
FDH038AN08A1 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH)
75 V, 80 A, 3.8 mW
FDH038AN08A1
Features
RDS(ON) = 3.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 125 nC (Typ.).
FDH055N15A - MOSFET
(Fairchild Semiconductor)
FDH055N15A — N-Channel PowerTrench® MOSFET
March 2015
FDH055N15A
N-Channel PowerTrench® MOSFET
150 V, 167 A, 5.9 mΩ
Features
• RDS(on) = 4.8 mΩ (Ty.
FDH055N15A - N-Channel MOSFET
(ON Semiconductor)
.
FDH1000 - Silicon Diode
(Fairchild Semiconductor)
Fairchild
Diode FDH1000
Datasheet
Silicon – Diode FDH1000
50V/200mA
DATASHEET
OEM – Fairchild
Source: Fairchild Databook 1978
Datasheet Rev. 1.3.
FDH1040 - Fixed Inductors
(TOKO)
Fixed Inductors for Surface Mounting
FDH1040/FDH1040B
Inductance Range: 0.36~0.56µH
DIMENSIONS
FDH1040
11.2 4.0 Max. 2.55 (6.0) 2.55
FDH1040B
11.3 .
FDH1040B - Fixed Inductors
(TOKO)
Fixed Inductors for Surface Mounting
FDH1040/FDH1040B
Inductance Range: 0.36~0.56µH
DIMENSIONS
FDH1040
11.2 4.0 Max. 2.55 (6.0) 2.55
FDH1040B
11.3 .
