Part number:
FDH055N15A
Manufacturer:
Fairchild Semiconductor
File Size:
690.34 KB
Description:
Mosfet.
* RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability
* RoHS Compliant Description This N-Channel MOSFET
FDH055N15A Datasheet (690.34 KB)
FDH055N15A
Fairchild Semiconductor
690.34 KB
Mosfet.
📁 Related Datasheet
FDH055N15A - N-Channel MOSFET
(ON Semiconductor)
.
FDH038AN08A1 - N-Channel MOSFET
(Fairchild Semiconductor)
FDH038AN08A1
February 2003
FDH038AN08A1
N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ
Features
• r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(.
FDH038AN08A1 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH)
75 V, 80 A, 3.8 mW
FDH038AN08A1
Features
RDS(ON) = 3.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 125 nC (Typ.).
FDH047AN08A0 - N-Channel MOSFET
(Fairchild Semiconductor)
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
June 2004
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ
Featur.
FDH047AN08A0 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH)
75 V, 80 A, 4.7 mW
FDH047AN08A0, FDP047AN08A0
Features
RDS(ON) = 4.0 mW (Typ.), VGS = 10 V, ID = 80 A Qg(TOT) = 9.
FDH1000 - Silicon Diode
(Fairchild Semiconductor)
Fairchild
Diode FDH1000
Datasheet
Silicon – Diode FDH1000
50V/200mA
DATASHEET
OEM – Fairchild
Source: Fairchild Databook 1978
Datasheet Rev. 1.3.
FDH1040 - Fixed Inductors
(TOKO)
Fixed Inductors for Surface Mounting
FDH1040/FDH1040B
Inductance Range: 0.36~0.56µH
DIMENSIONS
FDH1040
11.2 4.0 Max. 2.55 (6.0) 2.55
FDH1040B
11.3 .
FDH1040B - Fixed Inductors
(TOKO)
Fixed Inductors for Surface Mounting
FDH1040/FDH1040B
Inductance Range: 0.36~0.56µH
DIMENSIONS
FDH1040
11.2 4.0 Max. 2.55 (6.0) 2.55
FDH1040B
11.3 .