FDMA1032CZ Complementary PowerTrench MOSFET

Fairchild Semiconductor

Description

www.DataSheet4U.com FDMA1032CZ 20V Complementary PowerTrench® MOSFET May 2006 FDMA1032CZ 20V Complementary PowerTrench® MOSFET General .
This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applicat.

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Datasheet Specifications

Part number: FDMA1032CZ
Manufacturer: Fairchild Semiconductor
File Size: 189.60 KB
Datasheet: FDMA1032CZ_FairchildSemiconductor.pdf
Description: Complementary PowerTrench MOSFET

Features

* an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its phy

Applications

* It
* Q2: P-Channel
* 3.1 A,
* 20V. RDS(ON) = 95 mΩ @ VGS =
* 4.5V RDS(ON) = 141 mΩ @ VGS =
* 2.5V
* Low profile
* 0.8 mm maximum
* in the new package MicroFET 2x2 mm

FDMA1032CZ Distributors

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FDMA1032CZ Complementary PowerTrench MOSFET Fairchild Semiconductor

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