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FDMC2610 Datasheet - Fairchild Semiconductor

N-Channel UltraFET Trench MOSFET

FDMC2610 General Description

This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. * Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A * Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A * Low Profile - 1mm m.

FDMC2610 Datasheet (389.96 KB)

Preview of FDMC2610 PDF

Datasheet Details

Part number:

FDMC2610

Manufacturer:

Fairchild Semiconductor

File Size:

389.96 KB

Description:

N-channel ultrafet trench mosfet.

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FDMC2610 N-Channel UltraFET Trench MOSFET Fairchild Semiconductor

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