FDMC2610 N-Channel UltraFET Trench MOSFET

Fairchild Semiconductor

Description

www.DataSheet4U.com FDMC2610 N-Channel UltraFET Trench® MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ .
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.

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Datasheet Specifications

Part number: FDMC2610
Manufacturer: Fairchild Semiconductor
File Size: 389.96 KB
Datasheet: FDMC2610_FairchildSemiconductor.pdf
Description: N-Channel UltraFET Trench MOSFET

Applications

* Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A
* Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A
* Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm
* RoHS Compliant tm Application
* DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 7 G S S S 4 3 2 1 4

FDMC2610 Distributors

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FDMC2610 N-Channel UltraFET Trench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMC2610-like datasheet