Part number: FDMC2610
Manufacturer: Fairchild Semiconductor
File Size: 389.96KB
Download: 📄 Datasheet
Description: N-Channel UltraFET Trench MOSFET
General Description
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management .
* Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A
* Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A
* Low Profile - .
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications.
* Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A
* Max rDS(on) = 215mΩ at VGS = 6.
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