FDMC2610 Datasheet, Mosfet, Fairchild Semiconductor

FDMC2610 Features

• Mosfet General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. <

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Part number:

FDMC2610

Manufacturer:

Fairchild Semiconductor

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389.96kb

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📄 Datasheet

Description:

N-channel ultrafet trench mosfet. This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for

FDMC2610 Application

• Applications
• Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A
• Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A
• Low Profile - 1mm

TAGS

FDMC2610

Fairchild Semiconductor

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