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FDMC2610 - N-Channel UltraFET Trench MOSFET

General Description

This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.

It has been optimized for power management applications.

Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A Low Profile - 1mm m

Key Features

  • General.

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www.DataSheet4U.com FDMC2610 N-Channel UltraFET Trench® MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ Features General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. „ Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A „ Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A „ Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm „ RoHS Compliant tm Application „ DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 7 G S S S 4 3 2 1 4 3 2 1 8 MLP 3.3x3.