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FDMC510P - MOSFET

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness.

Battery Management Load Switch Top Bottom Pin 1 S SG S DD D D MLP 3.3x3.3 MOSFET Maximum

Features

  • Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A.
  • Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A.
  • Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A.
  • Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability in a widely used surface mount package.
  • 100% UIL Tested.
  • Termination is Lead-free and RoHS Compliant.
  • HBM ESD cap.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC510P P-Channel PowerTrench® MOSFET FDMC510P P-Channel PowerTrench® MOSFET -20 V, -18 A, 8.0 mΩ Features „ Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A „ Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A „ Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A „ Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ Termination is Lead-free and RoHS Compliant „ HBM ESD capability level >2 KV typical (Note 4) June 2014 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness.
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