FDMC510P - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDMC510P
Manufacturer	Fairchild Semiconductor
File Size	262.94 KB
Description	MOSFET
Datasheet	FDMC510P-FairchildSemiconductor.pdf

FDMC510P Product details

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness. Battery Management Load Switch Top Bottom Pin 1 S SG S DD D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter

Features

Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A.
Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A.
Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A.
Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A.
High performance trench technology for extremely low rDS(on).
High power and current handling capability in a widely used surface mount package.
100% UIL Tested.
Termination is Lead-free and RoHS Compliant.
HBM ESD cap.

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Published: Jan 10, 2017 |