FDMC510P
Features
- Max r DS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A
- Max r DS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A
- Max r DS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A
- Max r DS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A
- High performance trench technology for extremely low r DS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- Termination is Lead-free and Ro HS pliant
- HBM ESD capability level >2 KV typical (Note 4)
June 2014
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for r DS(ON), switching performance and ruggedness.
Applications
- Battery Management
- Load Switch
Top Bottom
Pin 1
S SG S
DD D D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
EAS PD TJ,...
