FDMC510P Description
This P−Channel MOSFET is produce using onsemi’s advanced POWERTRENCH® process that has been optimized for rDS(ON), switching performance and ruggedness.
FDMC510P Key Features
- Max rDS(on) = 8.0 mW at VGS = -4.5 V, ID = -12 A
- Max rDS(on) = 9.8 mW at VGS = -2.5 V, ID = -10 A
- Max rDS(on) = 13 mW at VGS = -1.8 V, ID = -9.3 A
- Max rDS(on) = 17 mW at VGS = -1.5 V, ID = -8.3 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
- 100% UIL Tested
- HBM ESD Capability Level >2 kV Typical (Note 4)
- This Device is Pb-Free, Halide Free and is RoHS pliant