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FDMC510P - P-Channel MOSFET

Description

This P

POWERTRENCH® process that has been optimized for rDS(ON), switching performance and ruggedness.

Features

  • Max rDS(on) = 8.0 mW at VGS =.
  • 4.5 V, ID =.
  • 12 A.
  • Max rDS(on) = 9.8 mW at VGS =.
  • 2.5 V, ID =.
  • 10 A.
  • Max rDS(on) = 13 mW at VGS =.
  • 1.8 V, ID =.
  • 9.3 A.
  • Max rDS(on) = 17 mW at VGS =.
  • 1.5 V, ID =.
  • 8.3 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • 100% UIL Tested.
  • H.

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Datasheet preview – FDMC510P

Datasheet Details

Part number FDMC510P
Manufacturer ON Semiconductor
File Size 196.93 KB
Description P-Channel MOSFET
Datasheet download datasheet FDMC510P Datasheet
Additional preview pages of the FDMC510P datasheet.

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Full PDF Text Transcription

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MOSFET – P-Channel, POWERTRENCH) -20 V, -18 A, 8.0 mW FDMC510P General Description This P−Channel MOSFET is produce using onsemi’s advanced POWERTRENCH® process that has been optimized for rDS(ON), switching performance and ruggedness. Features • Max rDS(on) = 8.0 mW at VGS = −4.5 V, ID = −12 A • Max rDS(on) = 9.8 mW at VGS = −2.5 V, ID = −10 A • Max rDS(on) = 13 mW at VGS = −1.8 V, ID = −9.3 A • Max rDS(on) = 17 mW at VGS = −1.5 V, ID = −8.3 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • 100% UIL Tested • HBM ESD Capability Level >2 kV Typical (Note 4) • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • Battery Management • Load Switch DATA SHEET www.onsemi.
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