FDMC510P Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

FDMC510P mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDMC510P
Manufacturer	Fairchild (now onsemi)
File Size	262.94 KB
Description	MOSFET
Download	FDMC510P Download (PDF)

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness.

Applications Battery Management Load Switch Top Bottom Pin 1 S SG S DD D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter

Overview

FDMC510P P-Channel PowerTrench® MOSFET FDMC510P P-Channel PowerTrench® MOSFET -20 V, -18 A, 8.

Key Features

Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A.
Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A.
Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A.
Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A.
High performance trench technology for extremely low rDS(on).
High power and current handling capability in a widely used surface mount package.
100% UIL Tested.
Termination is Lead-free and RoHS Compliant.
HBM ESD cap.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	FDMC510P	P-Channel MOSFET	ON Semiconductor

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