| Part Number | FDMC510P |
|---|---|
| Manufacturer | onsemi |
| Overview |
This P−Channel MOSFET is produce using onsemi’s advanced
POWERTRENCH® process that has been optimized for rDS(ON), switching performance and ruggedness.
Features
• Max rDS(on) = 8.0 mW at VGS = −4.5 V.
* Max rDS(on) = 8.0 mW at VGS = *4.5 V, ID = *12 A * Max rDS(on) = 9.8 mW at VGS = *2.5 V, ID = *10 A * Max rDS(on) = 13 mW at VGS = *1.8 V, ID = *9.3 A * Max rDS(on) = 17 mW at VGS = *1.5 V, ID = *8.3 A * High Performance Trench Technology for Extremely Low rDS(on) * High Power and Current Handling. |
FDMC510P Datasheet
The FDMC510P is a P-Channel MOSFET.
| Part Number | FDMC510P |
|---|---|
| Description | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications
Battery Manag.
* Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A * Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A * Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A * Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A * High performance trench technology for extremely low rDS(on) * High power and current handling. |