Datasheet4U Logo Datasheet4U.com

FDMS2510SDC - N-Channel MOSFET

Description

Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 2.9 mΩ at VGS = 10 V, ID = 23 A Max rDS(on) = 4.2 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode RoHS Compliant This N

Features

  • General.

📥 Download Datasheet

Datasheet preview – FDMS2510SDC

Datasheet Details

Part number FDMS2510SDC
Manufacturer Fairchild Semiconductor
File Size 396.51 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS2510SDC Datasheet
Additional preview pages of the FDMS2510SDC datasheet.

📁 Similar Datasheet

  • FDMS2572 - N-Channel MOSFET (ON Semiconductor)
  • FDMS2672 - N-Channel MOSFET (ON Semiconductor)
  • FDMS2734 - N-Channel MOSFET (ON Semiconductor)
  • FDMS2D4N03S - N-Channel Power MOSFET (ON Semiconductor)
  • FDMS003N08C - N-Channel MOSFET (ON Semiconductor)
  • FDMS007N08LC - N-Channel MOSFET (ON Semiconductor)
  • FDMS030N06B - N-Channel MOSFET (ON Semiconductor)
  • FDMS0310AS - N-Channel MOSFET (ON Semiconductor)
  • FDMS0312AS - N-Channel MOSFET (ON Semiconductor)
  • FDMS0312S - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDMS2510SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM FDMS2510SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM 25 V, 49 A, 2.9 mΩ July 2013 Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 2.9 mΩ at VGS = 10 V, ID = 23 A „ Max rDS(on) = 4.2 mΩ at VGS = 4.5 V, ID = 18 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Published: |