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FDMS8320L - MOSFET

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General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diod

Overview

FDMS8320L N-Channel PowerTrench® MOSFET March 2016 FDMS8320L N-Channel PowerTrench® MOSFET 40 V, 248 A, 1.

Key Features

  • Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A.
  • Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

📁 Similar Datasheet

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