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FDMS8320LDC - N-Channel MOSFET

Key Features

  • Max RDS(on) = 1.1 mW at VGS = 10 V, ID = 44 A.
  • Max RDS(on) = 1.5 mW at VGS = 4.5 V, ID = 37 A.
  • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
  • Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halogen Free and RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET – N-Channel, DUAL COOL) DFN8, POWERTRENCH) 40 V, 192 A, 1.1 mW FDMS8320LDC Features • Max RDS(on) = 1.1 mW at VGS = 10 V, ID = 44 A • Max RDS(on) = 1.5 mW at VGS = 4.