FDMS8320LDC Datasheet | Fairchild Semiconductor

FDMS8320LDC N-Channel Dual Cool TM Power Trench® MOSFET October 2012 N-Channel Dual Cool TM Power Trench® MOSFET 40 V, 130 A, 1.1 mΩ Features - Max r DS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A - Max r DS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - Next generation enhanced body diode technology, engineered for soft recovery - MSL1 robust package design - 100% UIL tested - Ro HS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool TM package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Applications - Oring FET / Load Switching - Synchronous Rectification - DC-DC Conversion Pin 1 Pin 1 Top Power 56 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous...