FDMS8320LDC Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient.
FDMS8320LDC Key Features
- Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A
- Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A
- Advanced Package and Silicon bination for low rDS(on)
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant