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FDMS8320LDC - N-Channel Dual Cool Power Trench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process.

Key Features

  • Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A.
  • Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET October 2012 FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET 40 V, 130 A, 1.1 mΩ Features „ Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A „ Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process.