FDMS8320L Datasheet | Fairchild Semiconductor

FDMS8320L N-Channel Power Trench® MOSFET March 2016 N-Channel Power Trench® MOSFET 40 V, 248 A, 1.1 mΩ Features - Max r DS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A - Max r DS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - Next generation enhanced body diode technology, engineered for soft recovery - MSL1 robust package design - 100% UIL tested - Ro HS pliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low r DS(on), fast switching speed ang body diode reverse recovery performance. Applications - Oring FET / Load Switching - Synchronous Rectification - DC-DC Conversion Top Pin 1 Bottom Pin 1 Power 56 SD GD MOSFET Maximum Ratings TA =...