FDS3812 Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 3.4 A, 80 V. RDS(ON) = 74 mΩ @ VGS = 10 V RDS(ON) = 84 mΩ @ VGS = 6 V - Fast switching speed - Low gate charge (13n C typ) - High performance trench technology for extremely low RDS(ON) - High power and current handling capability D1 D1 D2 D2 S1 G1 5 6 7 Q1 4 3 2 Q2 SO-8 S2 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25o C unless otherwise noted Parameter Ratings 80 ± 20 (Note 1a) Units 3.4 20 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1.0 0.9 - 55 to +175 °C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note...