FDS3812 Datasheet PDF (N-Channel MOSFET) | Download Fairchild Semiconductor FDS3812

FDS3812 - N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

3.4 A, 80 V. RDS(ON) = 74 mΩ @ VGS = 10 V RDS(ON) = 84 mΩ @ VGS = 6 V.
Fast switching speed.
Low gate charge (13nC typ).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability D1 D1 D2 D2 S1 G1 5 6 7 Q1 4 3 2 Q2 SO-8 S2 8 1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed TA=25oC unless otherwise noted Param.

Datasheet Details

Part number	FDS3812
Manufacturer	Fairchild Semiconductor
File Size	86.38 KB
Description	N-Channel MOSFET
Datasheet	FDS3812 Datasheet
Additional preview pages of the FDS3812 datasheet.

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Full PDF Text Transcription

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FDS3812 May 2001 FDS3812 80V N-Channel Dual PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 3.4 A, 80 V.

Published: Mar 30, 2005 |