FDS7060N7 Datasheet | Fairchild Semiconductor

scription This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features - 19 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.5 V - High performance trench technology for extremely low RDS(ON) - High power and current handling capability - Fast switching, low gate charge (35n C typical) - FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications - Synchronous rectifier - DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25o C unless otherwise noted Parameter Ratings 30 ± 20 (Note 1a) Units V V A W °C 19 60 3.0 - 55 to +150 Power Dissipation for Single Operation (Note...