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FDS7060N7 - 30V N-Channel PowerTrench MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Features

  • 19 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.5 V.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.
  • Fast switching, low gate charge (35nC typical).
  • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size.

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Datasheet preview – FDS7060N7

Datasheet Details

Part number FDS7060N7
Manufacturer Fairchild Semiconductor
File Size 213.51 KB
Description 30V N-Channel PowerTrench MOSFET
Datasheet download datasheet FDS7060N7 Datasheet
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FDS7060N7 May 2003 FDS7060N7 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 19 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.
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