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FDS8447 Single N-Channel PowerTrench MOSFET

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Description

www.DataSheet4U.com FDS8447 Single N-Channel PowerTrench® MOSFET November 2006 FDS8447 Single N-Channel PowerTrench® MOSFET 40V, 12.8A, 10.5mΩ Feat.
This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize t.

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Datasheet Specifications

Part number
FDS8447
Manufacturer
Fairchild Semiconductor
File Size
402.55 KB
Datasheet
FDS8447_FairchildSemiconductor.pdf
Description
Single N-Channel PowerTrench MOSFET

Features

* Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A
* Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A
* Low gate charge
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability
* RoHS compliant tm General

Applications

* DC - DC conversion D D D D SO-8 Pin 1 S S G S D D D D 5 6 7 8 4 G 3 2 1 S S S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Drain-Source Avalanche En

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