FDS8447 Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A - Max r DS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A - Low gate charge - High performance trench technology for extremely low r DS(on) - High power and current handling capability - Ro HS pliant tm General Description This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications - DC - DC conversion D D D D SO-8 Pin 1 S S G S 5 6 7 8 4 G 3 2 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 3) (Note 1a) (Note 1b) (Note 1a) Ratings 40 ±20 12.8 50 150 2.5 1 -55 to 150 Units V V A m J W °C Thermal Characteristics RθJA RθJC Thermal Resistance-Single operation, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1) 50 25 °C/W Package Marking and Ordering Information Device Marking FDS8447 Device FDS8447 Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation FDS8447 Rev. B .fairchildsemi. FDS8447 Single N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, referenced to 25°C VDS = 32V, VGS = 0V TJ = 55°C VGS = ±20V, VDS = 0V 40 34 1 10 ±100 V m V/°C µA µA n A On Characteristics (Note 2) VGS(th) ∆VGS(th) ∆TJ r DS(on) g FS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient...