FDS8958B

MOSFET

Fairchild Semiconductor

FDS8958B Features

* Q1: N-Channel

* Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A

* Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel

* Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A

* Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A

* HBM ESD protection level > 3.5 k

FDS8958B General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance. These devices are well suite d f.

FDS8958B Datasheet (1.16 MB)

FDS8958B Datasheet Preview — Preview of FDS8958B PDF

Datasheet Details

Part number:

FDS8958B

Manufacturer:

Fairchild Semiconductor

File Size:

1.16 MB

Description:

Mosfet.
FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V,.

📁 Related Datasheet

FDS8958 - Dual N & P-Channel PowerTrench MOSFET (Fairchild Semiconductor)
.. FDS8958 October 2004 FDS8958 Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement.

FDS8958A - Dual-Channel MOSFET (Fairchild Semiconductor)
FDS8958A April 2008 FDS8958A tm Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power fie.

FDS8958A-F085 - Dual N&P-Channel MOSFET (ON Semiconductor)
FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-.

FDS8958A_F085 - Dual N&P-Channel MOSFET (Fairchild Semiconductor)
FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET February 2010 FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET tm General Description The.

FDS8958B - Dual N & P-Channel Power MOSFET (ON Semiconductor)
FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V,.

FDS89141 - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 3.5 A, 62 .

FDS89161 - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105.

FDS89161LZ - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A,.

TAGS

FDS8958B MOSFET Fairchild Semiconductor

Image Gallery

FDS8958B Features

FDS8958B General Description

Datasheet Details

File Size:

Description:

FDS8958B Distributor