FDS8958B - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDS8958B
Manufacturer	Fairchild Semiconductor
File Size	1.16 MB
Description	MOSFET
Datasheet	FDS8958B Datasheet
Additional preview pages of the FDS8958B datasheet.

Product details

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance. RoHS Compliant DC-DC Conversion BLU and motor

Features

Q1: N-Channel.
Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A.
Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel.
Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A.
Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A.
HBM ESD protection level > 3.5 kV (Note 3) General.

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Published: Jan 11, 2017 |