Datasheet4U Logo Datasheet4U.com

FDS8958B - MOSFET

Datasheet Summary

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance.

Features

  • Q1: N-Channel.
  • Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A.
  • Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel.
  • Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A.
  • Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A.
  • HBM ESD protection level > 3.5 kV (Note 3) General.

📥 Download Datasheet

Datasheet preview – FDS8958B

Datasheet Details

Part number FDS8958B
Manufacturer Fairchild Semiconductor
File Size 1.16 MB
Description MOSFET
Datasheet download datasheet FDS8958B Datasheet
Additional preview pages of the FDS8958B datasheet.

📁 Similar Datasheet

  • FDS8958B - Dual N & P-Channel Power MOSFET (ON Semiconductor)
  • FDS8958A-F085 - Dual N&P-Channel MOSFET (ON Semiconductor)
  • FDS89141 - Dual N-Channel 100V MOSFET (VBsemi)
  • FDS8935 - Dual P-Channel MOSFET (ON Semiconductor)
  • FDS8949 - Dual N-Channel MOSFET (ON Semiconductor)
  • FDS8949-F085 - Dual N-Channel MOSFET (ON Semiconductor)
  • FDS8978 - N-Channel MOSFET (ON Semiconductor)
  • FDS8984 - N-Channel MOSFET (ON Semiconductor)
  • FDS8984-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDS8984-F40 - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ November 2013 Features Q1: N-Channel „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A „ Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel „ Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A „ Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A „ HBM ESD protection level > 3.5 kV (Note 3) General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance.
Published: |