FDS8958B Datasheet, Mosfet, Fairchild Semiconductor

FDS8958B Features

• Mosfet Q1: N-Channel
• Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A
• Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel
• Max rDS(on) = 51 mΩ at VGS = -10 V

PDF File Details

Part number:

FDS8958B

Manufacturer:

Fairchild Semiconductor

File Size:

1.16MB

Download:

📄 Datasheet

Description:

Mosfet. These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced Pow

FDS8958B Application

• Applications where low in-line power loss and fast switching are required. Application
• RoHS Compliant
• DC-DC Conversion

TAGS

FDS8958B

Fairchild Semiconductor

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