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FDS8958B - MOSFET

FDS8958B Description

FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V,.
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process.

FDS8958B Features

* Q1: N-Channel
* Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A
* Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel
* Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A
* Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A
* HBM ESD protection level > 3.5 k

FDS8958B Applications

* where low in-line power loss and fast switching are required. Application
* RoHS Compliant
* DC-DC Conversion
* BLU and motor drive inverter D2

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