FDS8958A_F085 Datasheet | Fairchild Semiconductor

FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET February 2010 Dual N & P-Channel PowerTrench® MOSFET tm General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features - Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V - Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @...