FDS8978
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Key Features
- rDS(on) = 18mΩ, VGS = 10V, ID = 7.5A
- rDS(on) = 21mΩ, VGS = 4.5V, ID = 6.9A
- High performance trench technology for extremely low rDS(on)
- Low gate charge
- High power and current handling capability
- 100% Rg Tested
