FDS8978 Datasheet | Fairchild Semiconductor

Features - r DS(on) = 18mΩ, VGS = 10V, ID = 7.5A - r DS(on) = 21mΩ, VGS = 4.5V, ID = 6.9A - High performance trench technology for extremely low r DS(on) - Low gate charge - High power and current handling capability - 100% Rg Tested - Ro HS pliant D1 D1 D2 D2 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. Applications - DC/DC converters D2 5 D2 6 Q2 4 G2 3 S2 SO-8 Pin 1 S2 G2 G1 S1 D1 D1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25o C, VGS = 10V, RθJA = 50o C/W) Continuous (TA = 25o C, VGS = 4.5V, RθJA = 50o C/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C TJ, TSTG Operating and Storage Temperature 7 8 Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient (Note 2a) Thermal Resistance, Junction to Ambient (Note 2c) Package Marking and Ordering Information Device Marking FDS8978 Device FDS8978 Package SO-8 Reel Size 330mm 2 G1 Q1 1...