FDS8978 N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDS8978 Dual N-Channel PowerTrench® MOSFET FDS8978 N-Channel PowerTrench® MOSFET 30V, 7.5A, 18mΩ January 2011 .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDS8978
Manufacturer: Fairchild Semiconductor
File Size: 582.19 KB
Datasheet: FDS8978-FairchildSemiconductor.pdf
Description: N-Channel PowerTrench MOSFET

Features

* rDS(on) = 18mΩ, VGS = 10V, ID = 7.5A
* rDS(on) = 21mΩ, VGS = 4.5V, ID = 6.9A
* High performance trench technology for extremely low rDS(on)
* Low gate charge
* High power and current handling capability
* 100% Rg Tested
* RoHS Compliant D

Applications

* DC/DC converters D2 5 D2 6 Q2 4 G2 3 S2 SO-8 Pin 1 S2 G2 G1 S1 D1 D1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) Continuous

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FDS8978 N-Channel PowerTrench MOSFET Fairchild Semiconductor

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