FDW2507N Common Drain N-Channel 2.5V specified PowerTrench MOSFET

Fairchild Semiconductor

Description

FDW2507N March 2003 FDW2507N Common Drain N-Channel 2.5V specified PowerTrench MOSFET General .
This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @.

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Datasheet Specifications

Part number: FDW2507N
Manufacturer: Fairchild Semiconductor
File Size: 129.56 KB
Datasheet: FDW2507N_FairchildSemiconductor.pdf
Description: Common Drain N-Channel 2.5V specified PowerTrench MOSFET

Features

* 7.5 A, 20 V. RDS(ON) = 19 mΩ @ VGS = 4.5 V RDS(ON) = 23 mΩ @ VGS = 2.5 V
* Isolated source and drain pins
* High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V

Applications

* Li-Ion Battery Pack D D D D G2 S2 G1 S1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 Units V V

FDW2507N Distributors

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FDW2507N Common Drain N-Channel 2.5V specified PowerTrench MOSFET Fairchild Semiconductor

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