FDW2507NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET

Fairchild Semiconductor

Description

FDW2507NZ March 2003 FDW2507NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General .
This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @.

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Datasheet Specifications

Part number: FDW2507NZ
Manufacturer: Fairchild Semiconductor
File Size: 130.12 KB
Datasheet: FDW2507NZ_FairchildSemiconductor.pdf
Description: Common Drain N-Channel 2.5V specified PowerTrench MOSFET

Features

* 7.5 A, 20 V RDS(ON) = 19 mΩ @ VGS = 4.5 V RDS(ON) = 23 mΩ @ VGS = 2.5 V
* Isolated source and drain pins
* ESD protection diode (note 3)
* High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V

Applications

* Li-Ion Battery Pack D D D D G2 S2 G1 S1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 ±12 (Note

FDW2507NZ Distributors

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FDW2507NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET Fairchild Semiconductor

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