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FDW2601NZ

Dual N-Channel 2.5V Specified PowerTrench MOSFET

FDW2601NZ Features

* ! 8.2A, 30V rDS(ON) = 0.015Ω, VGS = 4.5V rDS(ON) = 0.020Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package Applications ! Load switch ! B

FDW2601NZ General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics application.

FDW2601NZ Datasheet (424.04 KB)

Preview of FDW2601NZ PDF

Datasheet Details

Part number:

FDW2601NZ

Manufacturer:

Fairchild Semiconductor

File Size:

424.04 KB

Description:

Dual n-channel 2.5v specified powertrench mosfet.

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TAGS

FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

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