FDW262P - 20V P-Channel PowerTrench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDW262P
Manufacturer	Fairchild Semiconductor
File Size	87.82 KB
Description	20V P-Channel PowerTrench MOSFET
Datasheet	FDW262P_FairchildSemiconductor.pdf

FDW262P Product details

Description

This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

4.5 A,.
20 V. RDS(ON) = 47 mΩ @ VGS =.
4.5 V RDS(ON) = 65 mΩ @ VGS =.
2.5 V RDS(ON) = 100 mΩ @ VGS =.
1.8 V.
RDS(ON) rated for use with 1.8 V logic.
Low gate charge (13nC typical).
High performance trench technology for extremely low RDS(ON).
Low profile TSSOP-8 package.

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Published: Mar 30, 2005 |