FDY2000PZ Dual P-Channel Specified PowerTrenchR MOSFET

Fairchild Semiconductor

Description

www.DataSheet4U.com January 2006 FDY2000PZ Dual P-Channel ( * 2.5V) Specified PowerTrench® MOSFET FDY2000PZ Dual P-Channel ( * 2.5V) .
This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS =. 2.

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Datasheet Specifications

Part number: FDY2000PZ
Manufacturer: Fairchild Semiconductor
File Size: 229.86 KB
Datasheet: FDY2000PZ_FairchildSemiconductor.pdf
Description: Dual P-Channel Specified PowerTrenchR MOSFET

Features

* 350 mA,
* 20 V RDS(ON) = 1.2 Ω @ VGS =
* 4.5 V RDS(ON) = 1.6 Ω @ VGS =
* 2.5 V
* ESD protection diode (note 3)

Applications

* Li-Ion Battery Pack 6 5 4 S1 G1 1 2 3 6 5 4 D1 G2 S2 1 2 D2 3 TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed (Note 1a) 1a) Ratings

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FDY2000PZ Dual P-Channel Specified PowerTrenchR MOSFET Fairchild Semiconductor

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